HUITA OPTO-electronic Materials

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RTP Q-Switch
Product name : RTP Q-Switch
Product No. : 202196132629
Material : RbTiOPO4
Size : Dia. 25.4 x 35mm or according to requirements
Density(g/cm3) : 3.6
Refractive Index : 
Form : 
Purity : 
Application : Q-switch (laser ranging, lidar, medical laser, industrial laser)
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  Details:
1064nm transmission rate: > 98.5%
Available aperture, 4, 5, 6, 7, 8, 9, 10, 11, 12mm
1064nm half wave voltage: 1000V (3x3x10 + 10)
Extinction ratio: > 23dB
Acceptance angle: > 1 °
Damage threshold: > 600MW / cm2 at 1064nm (t = 10ns) film
Stability temperature range: - 50 ℃ - + 70 ℃

RTP crystal Q-switch adopts double crystal structure. The optical axes of the two crystals are perpendicular to each other. It can automatically compensate for the change of ambient temperature. It is a laser device without temperature control. In addition, RTP crystal devices also have the following obvious advantages:

1. Applicable wavelength: 450nm – 3 μ m. Device extinction ratio > 23 db;

2. Achievable pulse rise / fall time: 0.5-5ns;

3. Compared with other electro-optic devices, it has lower half wave voltage and is easier to control;

4. The crystal has good internal quality and low optical absorption;

5. The dynamic and static half wave voltages are basically the same, which is easy to install and adjust;

6. Suitable for high frequency operation, the maximum switching frequency can reach 1MHz;

7. The compact shape and low operating voltage make it more suitable for the application of new optical fiber and disk lasers;

8、15x15mm 2 Aperture devices can be used for large-scale military and aerospace lasers;

9. Operating temperature: - 50-70 ℃, no temperature control required;

10. Very low ringing effect;

11. The crystal damage threshold is 1GW / cm 2 @ 1064nm, 10ns pulse width;

12. The crystal is not deliquescent, low dielectric constant, excellent electrical stability, and can withstand external voltage for a long time.


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